Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al 2 O 3 layer in TiN\HfO 2 \Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric...

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Bibliographic Details
Main Authors: Goux, L., Fantini, A., Kar, G., Chen, Y., Jossart, N., Degraeve, R., Clima, S., Govoreanu, B., Lorenzo, G., Pourtois, G., Wouters, D. J., Kittl, J. A., Altimime, L., Jurczak, M.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Aluminum oxide
Hafnium compounds
Resistance
Switches
Tin
Tuning
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Summary:We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al 2 O 3 layer in TiN\HfO 2 \Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural' (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.
ISSN:0743-1562
DOI:10.1109/VLSIT.2012.6242510