A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

A 0.13μm 8Mb Cu x Si y O resistive memory test macro with 20F 2 cell size is developed based on logic process for the first time. Smart and adaptive assist write and read circuit are proposed and verified in order to fix yield and power consumption issues from large write speed and high temperature...

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Bibliographic Details
Main Authors: Xue, X. Y., Jian, W. X., Yang, J. G., Xiao, F. J., Chen, G., Xu, X. L., Xie, Y. F., Lin, Y. Y., Huang, R., Zhou, Q. T., Wu, J. G.
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Generators
on-pitch SA
Power demand
Resistance
RRAM
SARM
SAWM
Temperature measurement
Temperature sensors
yield
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Summary:A 0.13μm 8Mb Cu x Si y O resistive memory test macro with 20F 2 cell size is developed based on logic process for the first time. Smart and adaptive assist write and read circuit are proposed and verified in order to fix yield and power consumption issues from large write speed and high temperature resistance variation. SAWM (self-adaptive write mode) helps to enlarge R off /R on window from 8X to 24X at room temperature. The reset bit yield is improved from 61.5% to 100% and large power consumption is eliminated after set success. SARM (Self-adaptive read mode) improves read bit yield from 98% to 100% at 125°C. The typical access time of on-pitch voltage sensing SA(sense amplifier) is 21ns and high bandwidth throughput is supported.
ISSN:2158-5601
2158-5636
DOI:10.1109/VLSIC.2012.6243780