220-GHz Solid-State Power Amplifier Modules

This paper reports on several solid-state power amplifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power ≥60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power c...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2012-10, Vol.47 (10), p.2291-2297
Main Authors: Radisic, V., Leong, K. M. K. H., Sarkozy, S., Xiaobing Mei, Yoshida, W., Po-Hsin Liu, Deal, W. R., Lai, R.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Burn-in
Circuit properties
Circuits
Circuits of signal characteristics conditioning (including delay circuits)
Coplanar waveguide (CPW)
Coplanar waveguides
Electric, optical and optoelectronic circuits
Electromagnetic waveguides
Electronic circuits
Electronics
Exact sciences and technology
Gain
HEMT
High electron mobility transistors
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
MMICs
Modules
monolithic microwave integrated circuit (MMIC)
power amplifier (PA)
Power amplifiers
Power generation
Power measurement
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solid-state power amplifier (SSPA)
Transistors
Waveguides
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Description
Summary:This paper reports on several solid-state power amplifier (PA) modules operating at frequencies around the 220-GHz propagation window. Included is a single module demonstrating saturated output power ≥60 mW from 205 to 225 GHz and peak output power of 75 mW at 210 GHz using eight-way on-chip power combining. The output power is further increased by using waveguide power combining with WR-4 waveguide. Results include a single two-way combined module achieving >; 100 mW of power from 210 to 225 GHz and four-way combining using two two-way combiners to reach 185 mW of output power at 210 GHz. The amplifier MMICs uses sub-50-nm InP HEMT transistors, coplanar waveguide (CPW) technology, and on-chip electromagnetic transitions to waveguide. Finally, preliminary burn-in and initial room-temperature lifetest data is shown.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2012.2204923