A new high power device of GaN HEMTs on Si substrate with lateral heat dissipation packaging

This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on the device periphery surface for enhancing Si sub...

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Bibliographic Details
Main Authors: Hsin-Ping Chou, Chung-Hsiang Ho, Yung-Jen Cheng, Po-Chien Chou, Cheng, S.
Format: Conference Proceeding
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Electronic packaging thermal management
Gallium nitride
GaN HEMT
HEMTs
Infrared
Micro-Raman
MODFETs
packaging
Si substrate
Substrates
Temperature measurement
thermal
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Summary:This paper presents the packaging development of high power AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate. The device is attached in a V-groove copper base, and mounted on TO-3P leadframe. Our packaging structure is designed on the device periphery surface for enhancing Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device performance as well as thermal resistance were studied. Thermal characterization shows that the thermal resistance from GaN chip to TO-3P package is 13.72°C/W. The experimental results showed that a 25 mm total gate-periphery single chip packaged in a 5×3 mm V-groove Cu base showed 22 W power dissipation with a drain bias of 100 V.
ISSN:1093-5142
DOI:10.1109/COMPEL.2012.6251752