The new design for magnetoresistance effect on Hall plate structure

This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon wi...

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Bibliographic Details
Main Authors: Phetchakul, T., Taisettavatkul, P., Pengchan, W., Yamwong, W., Poyai, A.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Hall plate
Lorentz covariance
Magnetic fields
Magnetoresistance
Magnetoresistance effect
Resistance
Silicon
TCAD
Online Access:Request full text
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Summary:This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15 cm -3 , temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure.
DOI:10.1109/ECTICon.2012.6254189