Recess integration of platelet laser diodes with waveguides on silicon

We report the first demonstration of in-plane InGaAs/InP laser diodes integrated with SiON waveguides on silicon substrates using a modular recess-integration technique. This technique allows for pre-testing and selection of devices before integration, is compatible with integration on full CMOS waf...

Full description

Saved in:
Bibliographic Details
Main Authors: Famenini, S., Fonstad, C. G.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Fiber lasers
Measurement by laser beam
Optical waveguides
Silicon
Substrates
Waveguide lasers
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report the first demonstration of in-plane InGaAs/InP laser diodes integrated with SiON waveguides on silicon substrates using a modular recess-integration technique. This technique allows for pre-testing and selection of devices before integration, is compatible with integration on full CMOS wafers after conventional back-end processing is completed, and can be used to integrate multiple types of devices on a single wafer [1]. We feel it is superior to other optoelectronic integration techniques; more broadly, it is ideally suited to realizing robust, planar, monolithically integrated micro-systems incorporating a variety of materials and devices.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2012.6256956