Wideband 50W packaged GaN HEMT with over 60% PAE through internal harmonic control in S-band

This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and t...

Full description

Saved in:
Bibliographic Details
Main Authors: Cheron, Jerome, Campovecchio, Michel, Barataud, Denis, Reveyrand, Tibault, Stanislawiak, Michel, Eudeline, Philippe, Floriot, Didier
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
Gain
Gallium nitride
GaN HEMTs
Harmonic analysis
harmonic control
HEMTs
high efficiency
packaged powerbars
Power amplifiers
Power harmonic filters
wide bandwidth
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine the harmonic impedances seen by the internal GaN powerbar into high-efficiency regions whatever the external impedances presented to the package. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz (24% relative bandwidth). By optimizing source and load impedances at the 1 st -harmonic, the packaged GaN HEMT demonstrates 50 W output power with more than 60% PAE over 21% bandwidth.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2012.6259389