Large signal performance of ferroelectric FBARs

Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that swi...

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Bibliographic Details
Main Authors: Lee, Victor, Seungku Lee, Sis, Seyit Ahmet, Mortazawi, Amir
Format: Conference Proceeding
Language:English
Subjects:
Electric fields
Ferroelectric devices
Film bulk acoustic resonators
Integrated circuit modeling
Microwave circuits
nonlinear systems
Power measurement
Radio frequency
Voltage measurement
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Summary:Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2012.6259695