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Large signal performance of ferroelectric FBARs
Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that swi...
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creator | Lee, Victor Seungku Lee Sis, Seyit Ahmet Mortazawi, Amir |
description | Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power. |
doi_str_mv | 10.1109/MWSYM.2012.6259695 |
format | conference_proceeding |
fullrecord | <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_6259695</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6259695</ieee_id><sourcerecordid>6259695</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-68facebef1ed0b3f63fc8317f2aa32a015527ff54fca5750381346412ae055933</originalsourceid><addsrcrecordid>eNpFj81KAzEURuMfONa-gG7mBWaam-TmZ1mLVWGKoAV1VdJ4bxmZdkqmG99ewYLf5iwOHPiEuAFZA8gwWby9fixqJUHVVmGwAU_EFRjrNEhv3akoFDpbOQX27F9gOBeFBBMqa_D9UoyH4Uv-znmA4AsxaWLeUDm0m13syj1l7vM27hKVPZdMOffUUTrkNpXzu-nLcC0uOHYDjY8cieX8fjl7rJrnh6fZtKnaIA-V9RwTrYmBPuVas9WcvAbHKkatogRE5ZjRcIroUGoP2lgDKpJEDFqPxO1ftiWi1T6325i_V8ff-gfGzEch</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Large signal performance of ferroelectric FBARs</title><source>IEEE Xplore All Conference Series</source><creator>Lee, Victor ; Seungku Lee ; Sis, Seyit Ahmet ; Mortazawi, Amir</creator><creatorcontrib>Lee, Victor ; Seungku Lee ; Sis, Seyit Ahmet ; Mortazawi, Amir</creatorcontrib><description>Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 1467310859</identifier><identifier>ISBN: 9781467310857</identifier><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1467310867</identifier><identifier>EISBN: 1467310875</identifier><identifier>EISBN: 9781467310864</identifier><identifier>EISBN: 9781467310888</identifier><identifier>EISBN: 1467310883</identifier><identifier>EISBN: 9781467310871</identifier><identifier>DOI: 10.1109/MWSYM.2012.6259695</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electric fields ; Ferroelectric devices ; Film bulk acoustic resonators ; Integrated circuit modeling ; Microwave circuits ; nonlinear systems ; Power measurement ; Radio frequency ; Voltage measurement</subject><ispartof>2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6259695$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27904,54533,54898,54910</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6259695$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lee, Victor</creatorcontrib><creatorcontrib>Seungku Lee</creatorcontrib><creatorcontrib>Sis, Seyit Ahmet</creatorcontrib><creatorcontrib>Mortazawi, Amir</creatorcontrib><title>Large signal performance of ferroelectric FBARs</title><title>2012 IEEE/MTT-S International Microwave Symposium Digest</title><addtitle>MWSYM</addtitle><description>Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power.</description><subject>Electric fields</subject><subject>Ferroelectric devices</subject><subject>Film bulk acoustic resonators</subject><subject>Integrated circuit modeling</subject><subject>Microwave circuits</subject><subject>nonlinear systems</subject><subject>Power measurement</subject><subject>Radio frequency</subject><subject>Voltage measurement</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1467310859</isbn><isbn>9781467310857</isbn><isbn>1467310867</isbn><isbn>1467310875</isbn><isbn>9781467310864</isbn><isbn>9781467310888</isbn><isbn>1467310883</isbn><isbn>9781467310871</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFj81KAzEURuMfONa-gG7mBWaam-TmZ1mLVWGKoAV1VdJ4bxmZdkqmG99ewYLf5iwOHPiEuAFZA8gwWby9fixqJUHVVmGwAU_EFRjrNEhv3akoFDpbOQX27F9gOBeFBBMqa_D9UoyH4Uv-znmA4AsxaWLeUDm0m13syj1l7vM27hKVPZdMOffUUTrkNpXzu-nLcC0uOHYDjY8cieX8fjl7rJrnh6fZtKnaIA-V9RwTrYmBPuVas9WcvAbHKkatogRE5ZjRcIroUGoP2lgDKpJEDFqPxO1ftiWi1T6325i_V8ff-gfGzEch</recordid><startdate>201206</startdate><enddate>201206</enddate><creator>Lee, Victor</creator><creator>Seungku Lee</creator><creator>Sis, Seyit Ahmet</creator><creator>Mortazawi, Amir</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201206</creationdate><title>Large signal performance of ferroelectric FBARs</title><author>Lee, Victor ; Seungku Lee ; Sis, Seyit Ahmet ; Mortazawi, Amir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-68facebef1ed0b3f63fc8317f2aa32a015527ff54fca5750381346412ae055933</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Electric fields</topic><topic>Ferroelectric devices</topic><topic>Film bulk acoustic resonators</topic><topic>Integrated circuit modeling</topic><topic>Microwave circuits</topic><topic>nonlinear systems</topic><topic>Power measurement</topic><topic>Radio frequency</topic><topic>Voltage measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Lee, Victor</creatorcontrib><creatorcontrib>Seungku Lee</creatorcontrib><creatorcontrib>Sis, Seyit Ahmet</creatorcontrib><creatorcontrib>Mortazawi, Amir</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lee, Victor</au><au>Seungku Lee</au><au>Sis, Seyit Ahmet</au><au>Mortazawi, Amir</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Large signal performance of ferroelectric FBARs</atitle><btitle>2012 IEEE/MTT-S International Microwave Symposium Digest</btitle><stitle>MWSYM</stitle><date>2012-06</date><risdate>2012</risdate><spage>1</spage><epage>3</epage><pages>1-3</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1467310859</isbn><isbn>9781467310857</isbn><eisbn>1467310867</eisbn><eisbn>1467310875</eisbn><eisbn>9781467310864</eisbn><eisbn>9781467310888</eisbn><eisbn>1467310883</eisbn><eisbn>9781467310871</eisbn><abstract>Ferroelectric thin film bulk acoustic wave resonators (FBARs) have been of growing interest due to their electric field dependent properties. Resonators based on the ferroelectric barium strontium titanate (Ba x Sr (1−x) TiO 3 , BST) are intrinsically switchable, namely they have resonances that switch on with the application of a dc bias voltage. In this paper, the large signal performance and nonlinear behavior of BST FBARs are investigated. Measurement results show as the dc bias voltage increases, the nonlinear behavior due to high RF input power decreases. For better understanding, measurement results of BST FBARs are fitted to a nonlinear modified Butterworth-Van Dyke (MBVD) model with respect to dc bias voltage and RF input power.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2012.6259695</doi><tpages>3</tpages></addata></record> |
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ispartof | 2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3 |
issn | 0149-645X 2576-7216 |
language | eng |
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source | IEEE Xplore All Conference Series |
subjects | Electric fields Ferroelectric devices Film bulk acoustic resonators Integrated circuit modeling Microwave circuits nonlinear systems Power measurement Radio frequency Voltage measurement |
title | Large signal performance of ferroelectric FBARs |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T23%3A44%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Large%20signal%20performance%20of%20ferroelectric%20FBARs&rft.btitle=2012%20IEEE/MTT-S%20International%20Microwave%20Symposium%20Digest&rft.au=Lee,%20Victor&rft.date=2012-06&rft.spage=1&rft.epage=3&rft.pages=1-3&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=1467310859&rft.isbn_list=9781467310857&rft_id=info:doi/10.1109/MWSYM.2012.6259695&rft.eisbn=1467310867&rft.eisbn_list=1467310875&rft.eisbn_list=9781467310864&rft.eisbn_list=9781467310888&rft.eisbn_list=1467310883&rft.eisbn_list=9781467310871&rft_dat=%3Cieee_CHZPO%3E6259695%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-68facebef1ed0b3f63fc8317f2aa32a015527ff54fca5750381346412ae055933%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6259695&rfr_iscdi=true |