Photoemission Characteristics and Stopping Ability for Ions of ZnO Thin Films

ZnO thin film is a new type of wide bandgap semiconductors with excellent physical and chemical properties. It has potential applications in the fabrication of photocathode and ion barrier film used in the third generation micro-light devices. In this paper, firstly, the possibility of ZnO thin film...

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Bibliographic Details
Main Authors: Wang Yi-cong, Wang Xin, Liu Zhao-lu, Zhang Tai-min, Li Ye, Qin Xu-lei, Duanmu Qing-duo
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Cathodes
Ions
Photonic band gap
Zinc oxide
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Summary:ZnO thin film is a new type of wide bandgap semiconductors with excellent physical and chemical properties. It has potential applications in the fabrication of photocathode and ion barrier film used in the third generation micro-light devices. In this paper, firstly, the possibility of ZnO thin films applied in photocathode was analyzed based on the theoretical analysis and the quantum efficiencies for ZnO thin films were deduced. It was found that ZnO thin films especially p-type ZnO thin film can be used as the photocathode in the micro-light devices. Then, the stopping ability for ions of ZnO ion barrier film and the traditional Al 2 O 3 and SiO 2 ion barrier films were investigated using Monte-carlo simulation method. It was found that ZnO thin film can more effectively stopping ion feedback and can be used in the fabrication of ion barrier films.
ISSN:2156-8464
2156-8480
DOI:10.1109/SOPO.2012.6270456