InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.

Saved in:
Bibliographic Details
Main Authors: Ker, Pin Jern, Marshall, A. R. J., Krysa, A. B., David, J. P. R., Tan, C. H.
Format: Conference Proceeding
Language:English
Subjects:
Avalanche photodiodes
Bandwidth
Gain
Gain measurement
Masers
P-i-n diodes
Temperature measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InAs electron-avalanche photodiodes are shown to produce 3 dB-bandwidth of 3.5 GHz that is not limited by the avalanche gain. Highest gain bandwidth products of 580 and 430 GHz were measured at 77 K and room temperature respectively.
ISSN:2166-8884
2166-8892
DOI:10.1109/OECC.2012.6276450