Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications

This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital techn...

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Bibliographic Details
Main Authors: Huang, J.H., Glass, E., Abrokwah, J., Bernhardt, B., Majerus, M., Spears, E., Parsey, J.M., Scheitlin, D., Droopad, R., Mills, L.A., Hawthorne, K., Blaugh, J.
Format: Conference Proceeding
Language:English
Subjects:
Contact resistance
FETs
Heterojunctions
Low voltage
MESFETs
Passivation
Plasma applications
Plasma devices
Plasma properties
Radio frequency
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Summary:This paper describes a true enhancement mode RF power device with state-of-the-art performance operated at 3.5 Volts at 900 MHz. The performance was realized with a technology derived from the digital CGaAs/sup TM/ technology. The necessary device and process optimizations to adapt the digital technology for RF applications are discussed and results presented.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1997.628236