High power modulator driver ICs up to 30 Gb/s with AlGaAs/GaAs HEMTs

Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology w...

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Bibliographic Details
Main Authors: Lao, Z., Thiede, A., Nowotny, U., Schlechtweg, M., Hurm, V., Bronner, W., Hornung, J., Rieger-Motzer, M., Kaufel, G., Kohler, K., Hulsmann, A.
Format: Conference Proceeding
Language:English
Subjects:
Driver circuits
Gallium arsenide
HEMTs
High speed optical techniques
Integrated circuit technology
Integrated optics
Multiplexing
Optical modulation
Optical transmitters
Voltage
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Summary:Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2:1 multiplexer for high-speed optical-fiber links are presented. The ICs featuring differential configuration were fabricated in a 0.2 /spl mu/m gate-length enhancement and depletion HEMT technology with 60 GHz and 55 GHz f/sub T/. The modulator driver operates up to 25 Gb/s with an output voltage swing of 3.3 V/sub p-p/ at each output (corresponding to an internal current swing of 100 mA). The total voltage gain is 22 dB. The modulator driver with a integrated 2:1 multiplexer performs a data rate up to 30 Gb/s with an output voltage swing of 2.2 V/sub p-p/ at each output. Each circuit consumes 1.4 W power using a single supply voltage of -5 V.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1997.628274