44-Gb/s Silicon Microring Modulators Based on Zigzag PN Junctions

We experimentally demonstrate silicon microring modulators with >;40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85× 10 -5 /V and a resistance-capacitance bandwidth of 51 GHz is pr...

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Bibliographic Details
Published in:IEEE photonics technology letters 2012-10, Vol.24 (19), p.1712-1714
Main Authors: Xiao, Xi, Li, Xianyao, Xu, Hao, Hu, Yingtao, Xiong, Kang, Li, Zhiyong, Chu, Tao, Yu, Jinzhong, Yu, Yude
Format: Article
Language:English
Subjects:
Bandwidth
High speed
Junctions
microring resonator (MRR)
Optical modulation
Optical waveguides
Optimized production technology
Silicon
silicon modulators
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Summary:We experimentally demonstrate silicon microring modulators with >;40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85× 10 -5 /V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of ~ 8000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2213244