A High-Reliability High-Linearity High-Power RF MEMS Metal-Contact Switch for DC-40-GHz Applications

This paper presents an mN-level contact and restoring force RF microelectromechanical systems metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40-GHz applications. The device, which is insensitive to stress and temperature effects, achieves 1.2-1.5 mN o...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2012-10, Vol.60 (10), p.3096-3112
Main Authors: Patel, C. D., Rebeiz, G. M.
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Contact
Contact stresses
Contact switch
Contacts
Devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
electrostatic relay
Exact sciences and technology
Force
gradient insensitive
Handling
hard metal contact
high contact force
Manganese
Materials handling
Micro- and nanoelectromechanical devices (mems/nems)
Microelectromechanical systems
Micromechanical devices
Radio frequencies
Radio frequency
Renovating
RF microelectromechanical systems (MEMS)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
stress insensitive
Studies
Switches
Switching, multiplexing, switched capacity circuits
Temperature effects
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Summary:This paper presents an mN-level contact and restoring force RF microelectromechanical systems metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40-GHz applications. The device, which is insensitive to stress and temperature effects, achieves 1.2-1.5 mN of contact force (per contact) from 80 to 90 V and 1.0 mN of restoring force (per contact). The up-state capacitance is 8 fF, resulting in an isolation of 46, 31, and 14 dB at 1, 6, and 40 GHz, respectively. Measured results show switch resistances of 1-2 Ω and a reliability of >; 100 million cycles at 2-5 W under cold switching at 100 mW under hot-switching conditions, in an unpackaged and standard laboratory environment. Furthermore, the device was tested under prolonged hold-down conditions and demonstrated excellent RF power handling (>;10 W) and dc current handling (>;1 A) capability.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2012.2211888