A High-Reliability High-Linearity High-Power RF MEMS Metal-Contact Switch for DC-40-GHz Applications

• Published in: IEEE transactions on microwave theory and techniques 2012-10, Vol.60 (10), p.3096-3112
• Main Authors: Patel, C. D., Rebeiz, G. M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; Contact; Contact stresses; Contact switch; Contacts; Devices; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; electrostatic relay; Exact sciences and technology; Force; gradient insensitive; Handling; hard metal contact; high contact force; Manganese; Materials handling; Micro- and nanoelectromechanical devices (mems/nems); Microelectromechanical systems; Micromechanical devices; Radio frequencies; Radio frequency; Renovating; RF microelectromechanical systems (MEMS); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stress; stress insensitive; Studies; Switches; Switching, multiplexing, switched capacity circuits; Temperature effects
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2012.2211888

This paper presents an mN-level contact and restoring force RF microelectromechanical systems metal-contact switch exhibiting high reliability, high linearity, and high power handing for dc-40-GHz applications. The device, which is insensitive to stress and temperature effects, achieves 1.2-1.5 mN of contact force (per contact) from 80 to 90 V and 1.0 mN of restoring force (per contact). The up-state capacitance is 8 fF, resulting in an isolation of 46, 31, and 14 dB at 1, 6, and 40 GHz, respectively. Measured results show switch resistances of 1-2 Ω and a reliability of >; 100 million cycles at 2-5 W under cold switching at 100 mW under hot-switching conditions, in an unpackaged and standard laboratory environment. Furthermore, the device was tested under prolonged hold-down conditions and demonstrated excellent RF power handling (>;10 W) and dc current handling (>;1 A) capability.