Materials development for flexible displays

In this paper we report on the TFT performance of new organic n-channel semiconductors exhibiting very large carrier mobilities (2-3 cm 2 /Vs for injket-printed TFTs, >;10 cm 2 /Vs for single crystals), exceptional bias tress and thermal stress stability. Finally, flexible EPDs were fabricated us...

Full description

Saved in:
Bibliographic Details
Main Authors: Yu Xia, Tan, P., Wei Zhao, Yan, H., Boudinet, D., Zhihua Chen, Yan Zheng, Usta, H., Chen, M., Fang, J., Huang, S. W., Hsiao, C. C., Facchetti, A.
Format: Conference Proceeding
Language:English
Subjects:
Logic gates
Organic thin film transistors
Stress
Substrates
Thermal stability
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper we report on the TFT performance of new organic n-channel semiconductors exhibiting very large carrier mobilities (2-3 cm 2 /Vs for injket-printed TFTs, >;10 cm 2 /Vs for single crystals), exceptional bias tress and thermal stress stability. Finally, flexible EPDs were fabricated using these materials.