Magnetic-field line sensor using poly-Si micro Hall devices

We have developed a magnetic-field line sensor using poly-Si micro Hall devices. First, we fabricate the micro Hall devices using low-temperature poly-Si fabrication processes. Next, we measure the dependences of the Hall voltage (V H ) on the magnetic field (B) for each micro Hall device and verify...

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Bibliographic Details
Main Authors: Segawa, T., Yamaguchi, Y., Tadokoro, D., Hashimoto, H., Kimura, M.
Format: Conference Proceeding
Language:English
Subjects:
Amorphous magnetic materials
Magnetic devices
Magnetic field measurement
Magnetic fields
Thin film transistors
Voltage measurement
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Summary:We have developed a magnetic-field line sensor using poly-Si micro Hall devices. First, we fabricate the micro Hall devices using low-temperature poly-Si fabrication processes. Next, we measure the dependences of the Hall voltage (V H ) on the magnetic field (B) for each micro Hall device and verify that V H is linear to B although V H has an offset voltage that varies among each device even if B is zero. Finally, we succeed in detecting the distribution of the magnetic field along a line using the poly-Si micro Hall devices arrayed in a line, which is confirmed by comparing the detected result with that obtained using a conventional Gauss meter.