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Monolithic integration of GaAlAs superluminescent diode with the optical amplifier

In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the...

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Bibliographic Details
Main Authors: Guotong Du, Yongsheng Zhao, Xuemei Li, Junfeng Song, Weihua Han, Dingsan Gao, Shengli Wu, Devane, G., Stair, K.A., Chang, R.P.H.
Format: Conference Proceeding
Language:English
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Summary:In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the 3 /spl mu/m-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly.
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.1997.630557