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Monolithic integration of GaAlAs superluminescent diode with the optical amplifier
In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the...
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Main Authors: | , , , , , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | In this report, our recent results of an integrated device are reported. The integrated superluminescent diode (SLD) consisting of an LED/laser diode was fabricated using an AlGaAs SQW heterostructure wafer. A 3 /spl mu/m-wide superluminescent diode with 300-500 /spl mu/m length is aligned with the 3 /spl mu/m-wide input aperture of the tapered amplifier. The amplifier is 1.3-1.5 mm in length and the gain region expands linearly. |
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ISSN: | 1092-8081 2766-1733 |
DOI: | 10.1109/LEOS.1997.630557 |