EELS chemical bond characterization of process induced damages in low-k dielectric films

EELS chemical bond analysis has been used to characterize etching process induced plasma damages in low-k SiCOH materials. EELS can provide not only the information of element distribution, but also the insight of chemical bonding status. Through applying the Maximum-likelihood deconvolution to EEL...

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Bibliographic Details
Main Authors: YongKai Zhou, Jie Zhu, AnYan Du, YouNan Hua, SiPing Zhao, Wei Liu, Fan Zhang, Juan Boon Tan
Format: Conference Proceeding
Language:English
Subjects:
Bonding
Carbon
Chemicals
Deconvolution
Plasmas
Silicon
Online Access:Request full text
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Summary:EELS chemical bond analysis has been used to characterize etching process induced plasma damages in low-k SiCOH materials. EELS can provide not only the information of element distribution, but also the insight of chemical bonding status. Through applying the Maximum-likelihood deconvolution to EEL spectra, minor but critical changes in EELS core loss near edge fine structures can be clearly revealed. After comparing Si L 2,3 edge and O K-edge with literature simulation results, Si=O double bonds were proved to be generated by the oxidizing etching plasma at the trench side wall. This work can help to understand plasma reaction mechanism with SiCOH materials and thus can help new process development.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2012.6306296