Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs

This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76...

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Bibliographic Details
Published in:IEEE electron device letters 2012-11, Vol.33 (11), p.1535-1537
Main Authors: Richter, S., Sandow, C., Nichau, A., Trellenkamp, S., Schmidt, M., Luptak, R., Bourdelle, K. K., Zhao, Q. T., Mantl, S.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
FETs
Hafnium compounds
Materials science
Nanoscale materials and structures: fabrication and characterization
Nanowire
Nanowires
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon on insulator technology
strained silicon-on-insulator (sSOI)
subthreshold slope
Transistors
Tunneling
tunneling field-effect transistor (TFET)
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Summary:This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high- k /metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2213573