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Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs
This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76...
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| Published in: | IEEE electron device letters 2012-11, Vol.33 (11), p.1535-1537 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c293t-81f5fc6bb4312d9618278debd52284ff0b141f75fda5ae0bdcb6c74bd0fdbd983 |
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| cites | cdi_FETCH-LOGICAL-c293t-81f5fc6bb4312d9618278debd52284ff0b141f75fda5ae0bdcb6c74bd0fdbd983 |
| container_end_page | 1537 |
| container_issue | 11 |
| container_start_page | 1535 |
| container_title | IEEE electron device letters |
| container_volume | 33 |
| creator | Richter, S. Sandow, C. Nichau, A. Trellenkamp, S. Schmidt, M. Luptak, R. Bourdelle, K. K. Zhao, Q. T. Mantl, S. |
| description | This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high- k /metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction. |
| doi_str_mv | 10.1109/LED.2012.2213573 |
| format | article |
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We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2213573</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; FETs ; Hafnium compounds ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Nanowire ; Nanowires ; Physics ; Quantum wires ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon on insulator technology ; strained silicon-on-insulator (sSOI) ; subthreshold slope ; Transistors ; Tunneling ; tunneling field-effect transistor (TFET)</subject><ispartof>IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-81f5fc6bb4312d9618278debd52284ff0b141f75fda5ae0bdcb6c74bd0fdbd983</citedby><cites>FETCH-LOGICAL-c293t-81f5fc6bb4312d9618278debd52284ff0b141f75fda5ae0bdcb6c74bd0fdbd983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6313886$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,54795</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26625418$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Richter, S.</creatorcontrib><creatorcontrib>Sandow, C.</creatorcontrib><creatorcontrib>Nichau, A.</creatorcontrib><creatorcontrib>Trellenkamp, S.</creatorcontrib><creatorcontrib>Schmidt, M.</creatorcontrib><creatorcontrib>Luptak, R.</creatorcontrib><creatorcontrib>Bourdelle, K. K.</creatorcontrib><creatorcontrib>Zhao, Q. T.</creatorcontrib><creatorcontrib>Mantl, S.</creatorcontrib><title>Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high- k /metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Hafnium compounds</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowire</subject><subject>Nanowires</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon on insulator technology</subject><subject>strained silicon-on-insulator (sSOI)</subject><subject>subthreshold slope</subject><subject>Transistors</subject><subject>Tunneling</subject><subject>tunneling field-effect transistor (TFET)</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpNkD1LA0EQhhdRMEZ7weYay4s7-3V7ZYhJFIIpjPWxn2Hlsgm7J5J_74ULwWqGd-Z5iwehR8ATAFy_rOavE4KBTAgByit6hUbAuSwxF_QajXDFoKSAxS26y_kbY2CsYiO0WO_cVpVL1TlbfIY2mH0sVOz3LqkQ_4UfKu5_Q3LFNCV1LDY_Mbo2xG2xmG_yPbrxqs3u4TzH6KuPZ2_lar18n01XpSE17UoJnnsjtGYUiK0FSFJJ67TlhEjmPdbAwFfcW8WVw9oaLUzFtMXealtLOkZ46DVpn3NyvjmksFPp2ABuTh6a3kNz8tCcPfTI84AcVDaq9UlFE_KFI0IQzuBU_TT8Befc5SwoUCkF_QO6JWYs</recordid><startdate>20121101</startdate><enddate>20121101</enddate><creator>Richter, S.</creator><creator>Sandow, C.</creator><creator>Nichau, A.</creator><creator>Trellenkamp, S.</creator><creator>Schmidt, M.</creator><creator>Luptak, R.</creator><creator>Bourdelle, K. 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T. ; Mantl, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-81f5fc6bb4312d9618278debd52284ff0b141f75fda5ae0bdcb6c74bd0fdbd983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>Hafnium compounds</topic><topic>Materials science</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanowire</topic><topic>Nanowires</topic><topic>Physics</topic><topic>Quantum wires</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon on insulator technology</topic><topic>strained silicon-on-insulator (sSOI)</topic><topic>subthreshold slope</topic><topic>Transistors</topic><topic>Tunneling</topic><topic>tunneling field-effect transistor (TFET)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Richter, S.</creatorcontrib><creatorcontrib>Sandow, C.</creatorcontrib><creatorcontrib>Nichau, A.</creatorcontrib><creatorcontrib>Trellenkamp, S.</creatorcontrib><creatorcontrib>Schmidt, M.</creatorcontrib><creatorcontrib>Luptak, R.</creatorcontrib><creatorcontrib>Bourdelle, K. K.</creatorcontrib><creatorcontrib>Zhao, Q. T.</creatorcontrib><creatorcontrib>Mantl, S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Richter, S.</au><au>Sandow, C.</au><au>Nichau, A.</au><au>Trellenkamp, S.</au><au>Schmidt, M.</au><au>Luptak, R.</au><au>Bourdelle, K. K.</au><au>Zhao, Q. T.</au><au>Mantl, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2012-11-01</date><risdate>2012</risdate><volume>33</volume><issue>11</issue><spage>1535</spage><epage>1537</epage><pages>1535-1537</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter presents experimental results on tunneling field-effect transistors featuring arrays of Ω-gated uniaxially strained and unstrained silicon nanowires. The gate control of a SiO 2 /poly-Si gate stack is compared with a high- k /metal gate stack. Steep inverse subthreshold slopes down to 76 mV/dec and relatively high on-currents were achieved with the combination of high- k /metal gate and strained silicon nanowires. We observed negative differential conductance in the output characteristics, which we attribute to hot-carrier effects in the strong electric fields at the reverse-biased tunnel junction.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2012.2213573</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2012-11, Vol.33 (11), p.1535-1537 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_6313886 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology FETs Hafnium compounds Materials science Nanoscale materials and structures: fabrication and characterization Nanowire Nanowires Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology strained silicon-on-insulator (sSOI) subthreshold slope Transistors Tunneling tunneling field-effect transistor (TFET) |
| title | Omega-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs |
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