Enhanced photovoltaic properties of a-C/Si heterojunction solar cells

Boron doped amorphous carbon (a-C) thin films were synthesized by microwave surface wave plasma (MW SWP) chemical vapor deposition (CVD). The XPS results show successful doping of boron into the films, whereas atomic concentration of B into the films was about 1.6 at. %. Hall measurements indicate t...

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Bibliographic Details
Main Authors: Adhikari, S., Ghimire, D. C., Adhikary, S., Uchida, H., Wakita, K., Umeno, M.
Format: Conference Proceeding
Language:English
Subjects:
amorphous materials
Atom optics
Carbon
graphene
Photovoltaic cells
Photovoltaic systems
Silicon
structural properties
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Summary:Boron doped amorphous carbon (a-C) thin films were synthesized by microwave surface wave plasma (MW SWP) chemical vapor deposition (CVD). The XPS results show successful doping of boron into the films, whereas atomic concentration of B into the films was about 1.6 at. %. Hall measurements indicate that the films were p-type in semiconducting nature. TEM and Raman results showed that the some graphene layers are grown into the a-C film. The photovoltaic measurement of a-C:B/n-Si heterojunction solar cell displayed rectifying I-V characteristics under dark and illumination (AM 1.5 100 mW/cm 2 ) showed photovoltaic behavior with open-circuit voltage (V oc ) of 0.21 V, short circuit current density (J sc ) of 31.88 mA/cm 2 , fill factor (FF) of 0.36 and conversion efficiency (η) of 2.4 %. The films show photoconductive.
ISSN:0160-8371
DOI:10.1109/PVSC.2012.6318102