Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a...

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Bibliographic Details
Main Authors: Ngamo, M., Tous, L., Cornagliotti, E., Horzel, J., Janssens, T., Russell, R., Poortmans, J., Lombardet, B.
Format: Conference Proceeding
Language:English
Subjects:
120 ohm/sq emitter
Cu plating
Dielectrics
emitter removal
Impurities
Oxidation
PERC-type solar cells
Photovoltaic cells
Resistance
Silicon
Surface treatment
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Summary:This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl 3 diffusion or by selectively removing the rear side emitter in an inline 1-sided wet-chemical etching tool after diffusion. A metallization sequence [1,2] applying Ni and Cu plating, is performed to contact the moderately doped emitters. The best experimental split in this comparison resulted in excellent average conversion efficiency of 20.2%.
ISSN:0160-8371
DOI:10.1109/PVSC.2012.6318294