Investigation on the optical gain and threshold current density of Ga1−xInxAs1−y−zNySbz /GaAs strained quantum wells laser

The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga 1-x In x As 1-y-z N y Sb z has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this...

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Bibliographic Details
Main Authors: Aissat, A., Nacer, S., Ykhlef, F., Vilcot, J. P.
Format: Conference Proceeding
Language:English
Subjects:
GaInNAs
GaInNAsSb/GaAs
Lasers diode
Nitrogen
Optoelectronics
strained quantum wells
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Summary:The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga 1-x In x As 1-y-z N y Sb z has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this material has the property that it can be grown on a GaAs substrate while having a bandgap smaller than that of GaInAs. We study the influence of nitrogen and antimony on the lattice parameter and then the strain. Also, the effect of these two elements on the optical gain and threshold current density is investigated.
DOI:10.1109/ICMCS.2012.6320124