Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs

The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively.

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Bibliographic Details
Main Authors: Schmid, M., Oehme, M., Gollhofer, M., Kasche, M., Kasper, E., Schulze, J.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Electroluminescence
Ge LED
molecular beam epitaxy
P-i-n diodes
Photonic band gap
Silicon
Silicon Photonics
Tensile strain
Online Access:Request full text
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Description
Summary:The strain of MBE grown Ge-on-Si p-i-n diodes is engineered between zero and 0.24% tensile strain. From electroluminescence peak positions the direct bandgap energies are determined to vary between 0.801 eV and 0.782 eV respectively.
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2012.6324111