Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode

Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.

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Bibliographic Details
Main Authors: Hardy, M. T., Hsu, P. S., Koslow, I., Feezell, D. F., Nakamura, S., Speck, J. S., DenBaars, S. P.
Format: Conference Proceeding
Language:English
Subjects:
Diode lasers
Fluorescence
Gallium nitride
Semiconductor lasers
Strain
Stress
Waveguide lasers
Online Access:Request full text
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Summary:Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In 0.3 Ga 0.7 N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.
ISSN:2160-8989
2160-9004