Sub-threshold time-resolved spectroscopy of Mid-UV AlGaN laser diode structures pseudomorphically grown on bulk AlN

AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.

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Bibliographic Details
Main Authors: Garrett, G. A., Rotella, P., Shen, H., Wraback, M., Wunderer, T., Chua, C. L., Zhihong Yang, Northrup, J. E., Johnson, N. M.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Diode lasers
Gallium nitride
Optical resonators
Spectroscopy
Stimulated emission
Substrates
Online Access:Request full text
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Description
Summary:AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.
ISSN:2160-8989
2160-9004
DOI:10.1364/CLEO_AT.2012.JTh1L.5