Co 2FeSi Based Magnetic Tunnel Junctions With BaO Barrier

BaO has been introduced as a novel tunnel barrier material in magnetic tunnel junctions (MTJs). Due to the good agreement regarding lattice constants and crystal structure, we believe BaO to be particularly suitable as barrier in MTJs containing Heusler compound electrodes. Co 2 FeSi/BaO/Fe MTJs hav...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2012-11, Vol.48 (11), p.3825-3828
Main Authors: Rogge, Jan, Hedwig, Peter, Sterwerf, Christian, Hutten, Andreas
Format: Article
Language:English
Subjects:
Barium oxide
Electrical resistance measurement
Electrodes
Heusler compound
Iron
Junctions
magnetic films
magnetic tunnel junction (MTJ)
Magnetic tunneling
Molecular beam epitaxial growth
molecular beam epitaxy (MBE)
thin films
Tunneling magnetoresistance
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Summary:BaO has been introduced as a novel tunnel barrier material in magnetic tunnel junctions (MTJs). Due to the good agreement regarding lattice constants and crystal structure, we believe BaO to be particularly suitable as barrier in MTJs containing Heusler compound electrodes. Co 2 FeSi/BaO/Fe MTJs have been fabricated by molecular beam epitaxy (MBE) and investigated in terms of microstructure, transport properties and tunnel magneto resistance (TMR). A TMR amplitude as high as 104% at room temperature (RT) has been achieved for very small bias voltages ( V Bias ) and a strong dependence on V Bias could be observed as the TMR ratio decreases with increasing V Bias to about 14% at V Bias = 10 mV.
ISSN:0018-9464
DOI:10.1109/TMAG.2012.2197373