The need for transient I-V measurement of device ESD response

Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device mo...

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Bibliographic Details
Main Authors: Kuo-Hsuan Meng, Rosenbaum, E.
Format: Conference Proceeding
Language:English
Subjects:
Current measurement
Electrostatic discharges
Integrated circuit modeling
Pulse measurements
Semiconductor device measurement
Semiconductor device modeling
Transient analysis
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Description
Summary:Tuning the parameters of an ESD device compact model to match the results of pulsed I-V measurements does not guarantee that the model will correctly reproduce the device response to arbitrary ESD waveforms. Transient I-V measurement data are demonstrated to improve the completeness of the device model assessment process, as demonstrated in this work for the case of the grounded-gate MOSFET protection device. If an accurate compact model is used, circuit simulations replicate device-tester interactions that occur during ESD testing.
ISSN:0739-5159
2164-9340