Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment

We report on the first complete RF characterization of graphene field-effect transistor subharmonic resistive mixers in the frequency interval f RF =2-5 GHz . The analysis includes conversion loss (CL), noise figure (NF), and intermodulation distortion. Due to an 8-nm thin Al 2 O 3 gate dielectric,...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2012-12, Vol.60 (12), p.4035-4042
Main Authors: Andersson, M. A., Habibpour, O., Vukusic, J., Stake, J.
Format: Article
Language:English
Subjects:
FETs
Field-effect transistors (FETs)
Frequency measurement
graphene
intermodulation distortion (IMD)
Logic gates
Mixers
Noise measurement
noise measurements
subharmonic resistive mixers
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Summary:We report on the first complete RF characterization of graphene field-effect transistor subharmonic resistive mixers in the frequency interval f RF =2-5 GHz . The analysis includes conversion loss (CL), noise figure (NF), and intermodulation distortion. Due to an 8-nm thin Al 2 O 3 gate dielectric, the devices operate at only ~ 0 dBm of local oscillator (LO) power with an optimum measured CL in the range of 20-22 dB. The NF closely mimics the CL, thus determining the noise to be essentially thermal in origin, which is promising for cryogenic applications. The highest input third-order intercept point is measured to be 4.9 dBm at an LO power of 2 dBm.
ISSN:0018-9480
1557-9670
1557-9670
DOI:10.1109/TMTT.2012.2221141