Synthesis of InSb nanowires in anodic alumina modified matrixes

The methods of formation of modified anodic alumina matrixes (AAM) without barrier layer with metal, semiconductor and metal-oxide conductive contacts in the bottom side of pores has been developed. Semiconductor InSb nanostructures were selectively grown in modified AAM-template using electrochemic...

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Bibliographic Details
Main Authors: Gorokh, G., Obukhov, I., Poznyak, A., Lozovenko, A., Zakhlebaeva, A., Sochneva, E.
Format: Conference Proceeding
Language:English
Subjects:
Active appearance model
Electronic mail
Fabrication
Nanowires
Nickel
Silicon
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Summary:The methods of formation of modified anodic alumina matrixes (AAM) without barrier layer with metal, semiconductor and metal-oxide conductive contacts in the bottom side of pores has been developed. Semiconductor InSb nanostructures were selectively grown in modified AAM-template using electrochemical deposition on these contacts. Investigations of structure of formed InSb nanowires arrays have been performed.