Arsenide galium nanostructural diode with nonresonant tunneling

The low-signal impedance of a microwave diode on AlGaAs/GaAs nanostructure with electron tunnel injection through AlGaAs potential barrier and transit in GaAs drift layer is investigated. Frequency dependences of the impedance at width and height of a barrier layer of 2.5 nm and 0.3 eV is studied at...

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Bibliographic Details
Main Authors: Goncharuk, N. M., Karushkin, N. F.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Electronic mail
Gallium arsenide
Gallium nitride
Impedance
Microwave theory and techniques
Tunneling
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Summary:The low-signal impedance of a microwave diode on AlGaAs/GaAs nanostructure with electron tunnel injection through AlGaAs potential barrier and transit in GaAs drift layer is investigated. Frequency dependences of the impedance at width and height of a barrier layer of 2.5 nm and 0.3 eV is studied at different diode diameter and transit angle values. Maximal negative conductance of 192 mS is reached for the diode with both optimal diameter of 25 μm and transit angle of 1.1 π.