Active strain modulation in field effect devices

In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, ob...

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Bibliographic Details
Main Authors: van Hemert, T., Hueting, R. J. E.
Format: Conference Proceeding
Language:English
Subjects:
FETs
Modulation
Silicon
Strain
Tunneling
Online Access:Request full text
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Summary:In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong inversion only, to obtain a lower threshold voltage, but will be absent in the off-state to preserve the unstrained leakage current. Our results, obtained by combining electrical and mechanical finite element method simulation, demonstrate a seven mV/dec steeper subthreshold swing for a classical SOI transistor and ten mV/dec improvement for a silicon tunnel field effect transistor.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2012.6343349