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InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with...

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-11, Vol.9 (11), p.1445-1447
Main Authors: Lammert, R.M., Jones, A.M., Youtsey, C.T., Hughes, J.S., Roh, S.D., Adesida, I., Coleman, J.J.
Format: Article
Language:English
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Summary:The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40 dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 /spl Aring/.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.634703