Gain modeling of strained InGaAsP based MQW optical amplifiers

Experimental gain spectra of two strained multiquantum-well (MQW) optical amplifiers are compared to theoretical results obtained from Fermi's golden rule and a four-band k/spl middot/p method. Good agreement is found for both TE and TM modes on each structure.

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-11, Vol.9 (11), p.1475-1477
Main Authors: Debaisieux, G., Guemmouri, M., Chelles, S., Ougazzaden, A., Herve-Gruyer, G., Filoche, M., Martin, J.-Y.
Format: Article
Language:English
Subjects:
Charge carrier density
Charge carrier processes
Engineering Sciences
Laboratories
Optical amplifiers
Optical mixing
Optical wavelength conversion
Optics
Photonic
Photonic band gap
Quantum well devices
Semiconductor optical amplifiers
Stimulated emission
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Description
Summary:Experimental gain spectra of two strained multiquantum-well (MQW) optical amplifiers are compared to theoretical results obtained from Fermi's golden rule and a four-band k/spl middot/p method. Good agreement is found for both TE and TM modes on each structure.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.634713