Low dose SIMOX and impact of ITOX process on quality of SOI film

Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm/sup -2/) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have in...

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Bibliographic Details
Main Authors: Maszara, W.P., Bennett, J., Boden, T., Dockerty, R., Gondran, C.F.H., Jackett-Murphy, S., Vasudev, P.K., Anc, M.J., Hovel, H.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Argon
Atmospheric waves
Atomic force microscopy
Etching
MOS capacitors
Oxidation
Photoconductivity
Rough surfaces
Temperature
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Summary:Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm/sup -2/) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of the integrity of gate oxide grown on it. We have investigated low dose SIMOX material and the impact of its high temperature annealing as well as the subsequent ITOX process on structure and electrical properties of its SOI film. Several new findings about the SOI film quality and its relationship to process parameters are reported.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1997.634911