Behavior of indium in thin SOI films

The behavior of indium implanted in silicon-on-insulator (SOI) material is explored by using SIMS analysis to obtain the doping concentration profile as a function of the silicon film thickness for a fixed implant depth, and as a function of the implant depth for a fixed silicon film thickness. Base...

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Bibliographic Details
Main Authors: Jacobs, J.B., Schiebel, R., Joyner, K., Houston, T.W.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Doping profiles
Implants
Indium
Jacobian matrices
Semiconductor films
Shape
Silicon
Temperature
Thin film transistors
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Summary:The behavior of indium implanted in silicon-on-insulator (SOI) material is explored by using SIMS analysis to obtain the doping concentration profile as a function of the silicon film thickness for a fixed implant depth, and as a function of the implant depth for a fixed silicon film thickness. Based on the experimental data, the following observations can be made. Indium can be highly mobile and can diffuse throughout the buried oxide. As a result, there is a dopant depletion zone near the buried oxide interface. The indium doping profile can be practically invariant under certain implant conditions in thicker films. As a result of indium's highly mobile nature, a lower temperature process is necessary to maintain the as-implanted indium profile in thin-film SOI transistors.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1997.634936