Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters

The study presented here provides valuable insight into the variation of thermal resistances and capacitances with SOI MOSFET device geometry. It demonstrates that small-signal measurements are a powerful technique for investigating heat flow paths in MOSFETs. An empirical approach is presented that...

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Bibliographic Details
Main Authors: Tenbroek, B.M., Redman-White, W., Lee, M.S.L., Bunyan, R.J.T., Uren, M.J.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Electrical resistance measurement
Geometry
Interpolation
MOSFET circuits
Semiconductor device modeling
Semiconductor films
Silicon
Thermal conductivity
Thermal resistance
Online Access:Request full text
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Description
Summary:The study presented here provides valuable insight into the variation of thermal resistances and capacitances with SOI MOSFET device geometry. It demonstrates that small-signal measurements are a powerful technique for investigating heat flow paths in MOSFETs. An empirical approach is presented that allows estimation of dynamic thermal parameters directly from device geometries, based on a limited set of measurements.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1997.634959