A high temperature pressure sensor with /spl beta/-SiC piezoresistors on SOI substrates

This paper reports about the first piezoresistive pressure sensor for high operating temperatures using single crystalline, n-type /spl beta/-SiC piezoresistors on Silicon On Insulator (SOI) substrates. The new Silicon Carbide On Insulator (SiCOI) layer structure prevents a leakage current flow thro...

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Bibliographic Details
Main Authors: Ziermann, R., von Berg, J., Reichert, W., Obermeier, E., Eickhoff, M., Krotz, G.
Format: Conference Proceeding
Language:English
Subjects:
Crystallization
Insulation
Insulator testing
Leakage current
Piezoresistance
Piezoresistive devices
Silicon carbide
Silicon on insulator technology
Temperature distribution
Temperature sensors
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Summary:This paper reports about the first piezoresistive pressure sensor for high operating temperatures using single crystalline, n-type /spl beta/-SiC piezoresistors on Silicon On Insulator (SOI) substrates. The new Silicon Carbide On Insulator (SiCOI) layer structure prevents a leakage current flow through the substrate at high temperatures up to 723 K. The sensor was tested in the temperature range between room temperature and 573 K. The sensitivity of the device at room temperature is approximately 20.2 /spl mu/V/VkPa. This corresponds to a longitudinal gauge factor of -32 in the [100]-direction. The Temperature Coefficient of Sensitivity (TCS) is -0.16 %K/sup -1/ at 573 K.
DOI:10.1109/SENSOR.1997.635502