The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H 2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface p...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.3087-3092
Main Authors: Hughart, D. R., Schrimpf, R. D., Fleetwood, D. M., Rowsey, N. L., Law, M. E., Tuttle, B. R., Pantelides, S. T.
Format: Article
Language:English
Subjects:
Annealing
Construction
Defects
Degradation
Dosage
elevated temperature irradiation
Hydrogen
interface traps
low dose rate
Mathematical models
Oxides
Passivation
Protons
Radiation effects
Temperature measurement
Trapping
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Summary:Interface-trap buildup and annealing are examined as a function of temperature, dose rate, and H 2 concentration using a physics-based model. The roles of a number of common oxide defects in radiation-induced interface-trap buildup are evaluated under various conditions. Defects near the interface play a significant role in determining interface-trap buildup by trapping protons as proton concentration and temperature increase.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2220982