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Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center

Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-des...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.3154-3159
Main Authors: Cascio, E. W., Riley, K. J., McCormack, J., Flanagan, R.
Format: Article
Language:English
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Summary:Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2221741