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Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center
Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-des...
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Published in: | IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.3154-3159 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements. |
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ISSN: | 0018-9499 1558-1578 |
DOI: | 10.1109/TNS.2012.2221741 |