Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium \hbox^/\hbox Junction

In this letter, we investigate the electrical behavior of vacancy V Ge defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n + /p junction diodes were also studied with J - V , transmission elect...

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Bibliographic Details
Published in:IEEE electron device letters 2013-01, Vol.34 (1), p.15-17
Main Authors: Jaewoo Shim, Song, I., Jung, W.-S, Nam, J., Leem, J. W., Yu, J. S., Kim, D. E., Cho, W. J., Kim, Y. S., Jun, D.-H, Heo, J., Park, W., Jin-Hong Park, Saraswat, K. C.
Format: Article
Language:English
Subjects:
Annealing
Defect
Germanium
germanium (Ge)
hbox{n}^{+}/\hbox{p} junction
Hydrogen
Junctions
Silicon
Surface treatment
Temperature measurement
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Summary:In this letter, we investigate the electrical behavior of vacancy V Ge defects in Ge at various thermal annealing conditions through electrochemical capacitance-voltage analysis. Then, the effects of the annealing process on Ge n + /p junction diodes were also studied with J - V , transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects of point-defect healing and dopant diffusion/loss phenomena. The V Ge defects tend to heal by recombining with Ge interstitial atoms as the annealing process temperature increases. However, the diffusion/loss problems of P atoms in Ge become severe at above 500 ° C. Therefore, an optimal postfabrication annealing process at 600 ° C is proposed in terms of point-defect healing and dopant diffusion/loss reduction.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2226016