Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space

Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's target...

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Bibliographic Details
Main Authors: El-Banna, M. M., Sabry, Y. M., Fikry, W., Abdolkader, T. M., Omar, O. A.
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
Computational efficiency
Computational modeling
coupled-mode space
double-gate MOSFETs
Equations
Logic gates
Mathematical model
MOSFETs
Non-Equilibrium Green's Function Formalism
quantum transport
real space
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Summary:Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.
DOI:10.1109/ICEngTechnol.2012.6396138