Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space

Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's target...

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Main Authors: El-Banna, M. M., Sabry, Y. M., Fikry, W., Abdolkader, T. M., Omar, O. A.
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
Computational efficiency
Computational modeling
coupled-mode space
double-gate MOSFETs
Equations
Logic gates
Mathematical model
MOSFETs
Non-Equilibrium Green's Function Formalism
quantum transport
real space
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Sabry, Y. M.
Fikry, W.
Abdolkader, T. M.
Omar, O. A.
description Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.
doi_str_mv 10.1109/ICEngTechnol.2012.6396138
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6396138</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6396138</ieee_id><sourcerecordid>6396138</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-3dffb884fe7f81b31ad06a61541cc406695cbb6d9c8aaf60797b3859e8a2d57e3</originalsourceid><addsrcrecordid>eNo1kNFKwzAYhSMiqLNP4E18gM6kadPEOylTB5NdrJfC-Nv8mZG0qU0r-PYONq8O58D3XRxCHjhbcs7047pa9Yca288--GXGeLaUQksu1AVJdKl4LkuRK6blJbn9Lyq7JkmMX4yxo0Nqld-Qj53rZg-TCz0Nln7P0E9zR6cR-jiEcaKupybMjUd6gAnp-3b3sqrjE63CPHg0aRcM0jhAi_QHxzhHOiL403JHriz4iMk5F6Q-wtVbutm-rqvnTeo0m1JhrG2Uyi2WVvFGcDBMguRFzts2Z1Lqom0aaXSrAKxkpS4boQqNCjJTlCgW5P6kdYi4H0bXwfi7P_8h_gB081fw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>El-Banna, M. M. ; Sabry, Y. M. ; Fikry, W. ; Abdolkader, T. M. ; Omar, O. A.</creator><creatorcontrib>El-Banna, M. M. ; Sabry, Y. M. ; Fikry, W. ; Abdolkader, T. M. ; Omar, O. A.</creatorcontrib><description>Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.</description><identifier>ISBN: 1467348082</identifier><identifier>ISBN: 9781467348089</identifier><identifier>EISBN: 9781467348096</identifier><identifier>EISBN: 1467348104</identifier><identifier>EISBN: 9781467348102</identifier><identifier>EISBN: 1467348090</identifier><identifier>DOI: 10.1109/ICEngTechnol.2012.6396138</identifier><language>eng</language><publisher>IEEE</publisher><subject>Accuracy ; Computational efficiency ; Computational modeling ; coupled-mode space ; double-gate MOSFETs ; Equations ; Logic gates ; Mathematical model ; MOSFETs ; Non-Equilibrium Green's Function Formalism ; quantum transport ; real space</subject><ispartof>2012 International Conference on Engineering and Technology (ICET), 2012, p.1-5</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6396138$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6396138$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>El-Banna, M. M.</creatorcontrib><creatorcontrib>Sabry, Y. M.</creatorcontrib><creatorcontrib>Fikry, W.</creatorcontrib><creatorcontrib>Abdolkader, T. M.</creatorcontrib><creatorcontrib>Omar, O. A.</creatorcontrib><title>Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space</title><title>2012 International Conference on Engineering and Technology (ICET)</title><addtitle>ICEngTechnol</addtitle><description>Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.</description><subject>Accuracy</subject><subject>Computational efficiency</subject><subject>Computational modeling</subject><subject>coupled-mode space</subject><subject>double-gate MOSFETs</subject><subject>Equations</subject><subject>Logic gates</subject><subject>Mathematical model</subject><subject>MOSFETs</subject><subject>Non-Equilibrium Green's Function Formalism</subject><subject>quantum transport</subject><subject>real space</subject><isbn>1467348082</isbn><isbn>9781467348089</isbn><isbn>9781467348096</isbn><isbn>1467348104</isbn><isbn>9781467348102</isbn><isbn>1467348090</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2012</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1kNFKwzAYhSMiqLNP4E18gM6kadPEOylTB5NdrJfC-Nv8mZG0qU0r-PYONq8O58D3XRxCHjhbcs7047pa9Yca288--GXGeLaUQksu1AVJdKl4LkuRK6blJbn9Lyq7JkmMX4yxo0Nqld-Qj53rZg-TCz0Nln7P0E9zR6cR-jiEcaKupybMjUd6gAnp-3b3sqrjE63CPHg0aRcM0jhAi_QHxzhHOiL403JHriz4iMk5F6Q-wtVbutm-rqvnTeo0m1JhrG2Uyi2WVvFGcDBMguRFzts2Z1Lqom0aaXSrAKxkpS4boQqNCjJTlCgW5P6kdYi4H0bXwfi7P_8h_gB081fw</recordid><startdate>201210</startdate><enddate>201210</enddate><creator>El-Banna, M. M.</creator><creator>Sabry, Y. M.</creator><creator>Fikry, W.</creator><creator>Abdolkader, T. M.</creator><creator>Omar, O. A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201210</creationdate><title>Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space</title><author>El-Banna, M. M. ; Sabry, Y. M. ; Fikry, W. ; Abdolkader, T. M. ; Omar, O. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-3dffb884fe7f81b31ad06a61541cc406695cbb6d9c8aaf60797b3859e8a2d57e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Accuracy</topic><topic>Computational efficiency</topic><topic>Computational modeling</topic><topic>coupled-mode space</topic><topic>double-gate MOSFETs</topic><topic>Equations</topic><topic>Logic gates</topic><topic>Mathematical model</topic><topic>MOSFETs</topic><topic>Non-Equilibrium Green's Function Formalism</topic><topic>quantum transport</topic><topic>real space</topic><toplevel>online_resources</toplevel><creatorcontrib>El-Banna, M. M.</creatorcontrib><creatorcontrib>Sabry, Y. M.</creatorcontrib><creatorcontrib>Fikry, W.</creatorcontrib><creatorcontrib>Abdolkader, T. M.</creatorcontrib><creatorcontrib>Omar, O. A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>El-Banna, M. M.</au><au>Sabry, Y. M.</au><au>Fikry, W.</au><au>Abdolkader, T. M.</au><au>Omar, O. A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space</atitle><btitle>2012 International Conference on Engineering and Technology (ICET)</btitle><stitle>ICEngTechnol</stitle><date>2012-10</date><risdate>2012</risdate><spage>1</spage><epage>5</epage><pages>1-5</pages><isbn>1467348082</isbn><isbn>9781467348089</isbn><eisbn>9781467348096</eisbn><eisbn>1467348104</eisbn><eisbn>9781467348102</eisbn><eisbn>1467348090</eisbn><abstract>Quantum transport simulation in DoubleGate (DG) MOSFETs using the Non-Equilibrium Green's function Formalism (NEGF) in both coupled-mode space (CMS) and real space (RS) is reported. The transport models were implemented in the same simulator and used to simulate near-and long-term's targets of the ITRS for DG MOSFETs. The CMS presents the advantage of simulation time reduction without significant loss of accuracy, when sufficient number of modes is used. The computational burden is reduced by a factor of 7 comparing with RS and the percentage error in the terminal current is less than 0.2 % for the year 2017 target device of the ITRS.</abstract><pub>IEEE</pub><doi>10.1109/ICEngTechnol.2012.6396138</doi><tpages>5</tpages></addata></record>
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subjects Accuracy
Computational efficiency
Computational modeling
coupled-mode space
double-gate MOSFETs
Equations
Logic gates
Mathematical model
MOSFETs
Non-Equilibrium Green's Function Formalism
quantum transport
real space
title Simulation of quantum transport in double gate MOSFETs: Coupled-mode space versus real space
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T18%3A21%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Simulation%20of%20quantum%20transport%20in%20double%20gate%20MOSFETs:%20Coupled-mode%20space%20versus%20real%20space&rft.btitle=2012%20International%20Conference%20on%20Engineering%20and%20Technology%20(ICET)&rft.au=El-Banna,%20M.%20M.&rft.date=2012-10&rft.spage=1&rft.epage=5&rft.pages=1-5&rft.isbn=1467348082&rft.isbn_list=9781467348089&rft_id=info:doi/10.1109/ICEngTechnol.2012.6396138&rft.eisbn=9781467348096&rft.eisbn_list=1467348104&rft.eisbn_list=9781467348102&rft.eisbn_list=1467348090&rft_dat=%3Cieee_6IE%3E6396138%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-3dffb884fe7f81b31ad06a61541cc406695cbb6d9c8aaf60797b3859e8a2d57e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6396138&rfr_iscdi=true