EMI comparison between Si and SiC technology in a boost converter

In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using Si technology as reference. The comparison parameters were the switching times, and the conducted and radiated EMI. The pape...

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Bibliographic Details
Main Authors: Bogonez-Franco, P., Sendra, J. B.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Boost converter
carbide
conducted EMI
Electromagnetic interference
MOSFET circuits
radiated EMI
Semiconductor diodes
Silicon
Silicon carbide
silicon carbide (SiC)
Switches
Transistors
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Summary:In this paper we present a comparison of the EMI generated by a dc-dc boost converter, using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using Si technology as reference. The comparison parameters were the switching times, and the conducted and radiated EMI. The paper shows that the use of SiC diode has great influence on the radiated EMI. The use of SiC MOSFET combined with Si diode reduces the radiated and conducted EMI generated by the converter.
ISSN:2325-0356
DOI:10.1109/EMCEurope.2012.6396739