Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators

In this paper we will present an electrical equivalent electro-thermal model for simulating GaN-on-Si high electron mobility transistors (HEMTs) in circuit simulators. The extraction procedure for the thermal subcircuit will be shown, which is based on finite element modeling. The model will be veri...

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Bibliographic Details
Main Authors: Stoffels, S., Oprins, H., Marcon, D., Geens, K., Xuanwu Kang, Van Hove, M., Decoutere, S.
Format: Conference Proceeding
Language:English
Subjects:
Gallium nitride
Heating
Integrated circuit modeling
Logic gates
Temperature measurement
Thermal resistance
Transistors
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Summary:In this paper we will present an electrical equivalent electro-thermal model for simulating GaN-on-Si high electron mobility transistors (HEMTs) in circuit simulators. The extraction procedure for the thermal subcircuit will be shown, which is based on finite element modeling. The model will be verified by electrical measurements and micro-Raman measurements.