The lateral superjunction PSOI LIGBT and LDMOSFET

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state...

Full description

Saved in:
Bibliographic Details
Main Authors: Antoniou, M., Tee, E. K. C., Pilkington, S. J., Pal, D. K., Udrea, F., Hoelke, Alexander Dietrich
Format: Conference Proceeding
Language:English
Subjects:
Anodes
Insulated gate bipolar transistors
Junctions
Logic gates
Silicon
Silicon on insulator technology
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with R dson of 765mΩ.mm2. It exhibits reduced specific on-state resistance R dson and higher saturation current (I dsat ) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology.
ISSN:1545-827X
2377-0678
DOI:10.1109/SMICND.2012.6400763