High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C

This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes m...

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Bibliographic Details
Main Authors: Pathrose, J., Xiaohui Gong, Lei Zou, Jeongwook Koh, Chai, K. T. C., Minkyu Je, Yong Ping Xu
Format: Conference Proceeding
Language:English
Subjects:
Bandgap Reference
Gain
High Temperature
Op-amp Offset
Photonic band gap
Resistors
SOI
Temperature Compensation
Temperature dependence
Temperature distribution
Temperature measurement
Voltage measurement
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Summary:This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples.
DOI:10.1109/RFIT.2012.6401630