High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C

This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes m...

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Main Authors: Pathrose, J., Xiaohui Gong, Lei Zou, Jeongwook Koh, Chai, K. T. C., Minkyu Je, Yong Ping Xu
Format: Conference Proceeding
Language:English
Subjects:
Bandgap Reference
Gain
High Temperature
Op-amp Offset
Photonic band gap
Resistors
SOI
Temperature Compensation
Temperature dependence
Temperature distribution
Temperature measurement
Voltage measurement
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creator Pathrose, J.
Xiaohui Gong
Lei Zou
Jeongwook Koh
Chai, K. T. C.
Minkyu Je
Yong Ping Xu
description This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples.
doi_str_mv 10.1109/RFIT.2012.6401630
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Bandgap Reference
Gain
High Temperature
Op-amp Offset
Photonic band gap
Resistors
SOI
Temperature Compensation
Temperature dependence
Temperature distribution
Temperature measurement
Voltage measurement
title High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C
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